GaN單片集成邏輯門電路

• 2018年，EPFL的研究人員使用氮化鎵D-mode + E-mode單片集成來(lái)實(shí)現(xiàn)簡(jiǎn)單的邏輯門電路
  
• 商業(yè)上氮化鎵數(shù)字電路的價(jià)值還有待時(shí)日

Minghua Zhu and Elison Matioli,?école Polytechnique Fédérale de Lausanne (EPFL)；Monolithic Integration of GaN-Based NMOS Digital?Logic Gate Circuits with E-Mode Power GaN

MOSHEMTs, Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs,, May 13-17, 2018, Chicago, USA